NDLI: V-Gate GaN HEMTs for X-Band Power Applications

Content Provider	IEEE Xplore Digital Library
Author	Rongming Chu Likun Shen Fichtenbaum, N. Brown, D. Zhen Chen Keller, S. DenBaars, S.P. Mishra, U.K.
Copyright Year	1980
Abstract	GaN high electron mobility transistors (HEMTs) with novel V-shaped gates were developed. The V-gate GaN HEMTs feature two key technologies: One is the use of an epitaxially grown GaN cap layer to isolate the surface charging from affecting the 2DEG channel; the other one is the adoption of a V-shaped gate-recess geometry that effectively mitigates the electric-field crowding at the gate edge. The combination of these two technologies enables high-voltage and dispersion-free operation without significantly sacrificing the devices' bandwidth. At 10-GHz frequency and 48-V drain bias, the V-gate devices exhibited an output power density of 12.2 W/mm with the associated power added efficiency as high as 65%. This result represents, to date, the highest reported efficiency at this frequency and operating voltage, indicating that the V-gate GaN HEMTs are suitable for X-band power applications.
Sponsorship	IEEE Electron Devices Society
Starting Page	974
Ending Page	976
Page Count	3
File Size	347570
File Format	PDF
ISSN	07413106
Volume Number	29
Issue Number	9
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-09-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium nitride HEMTs MODFETs Isolation technology Frequency Surface charging Geometry Bandwidth Power generation Voltage X-band GaN high electron mobility transistors (HEMTs) power amplifier V-gate
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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