NDLI: Laser Annealing of Amorphous Germanium on Silicon–Germanium Source/Drain for Strain and Performance Enhancement in pMOSFETs

Content Provider	IEEE Xplore Digital Library
Author	Fangyue Liu Hoong-Shing Wong Kah-Wee Ang Ming Zhu Xincai Wang Lai, D.M.-Y. Poh-Chong Lim Yee-Chia Yeo
Copyright Year	1980
Abstract	We report the first demonstration of a novel germanium-enrichment process for forming a silicon-germanium (SiGe) source/drain (S/D) stressor with a high Ge content. The process involves laser-induced local melting and intermixing of a Ge layer with an underlying Si_0.8Ge_0.2 S/D region, leading to a graded SiGe S/D stressor with a significant increase in the peak Ge content. Various laser fluences were investigated for the laser annealing process. The process is then successfully integrated in a device fabrication flow, forming strained silicon-on-insulator p-channel field-effect transistors (p-FETs) with a high Ge content in SiGe S/D. A drive current enhancement of ~ 12% was achieved with this process, as compared to a strained p-FET with Si_0.8Ge_0.2 S/D p-FETs. The I _Dsat enhancement, primarily attributed to strain-induced mobility improvement, is found to increase with decreasing gate lengths.
Sponsorship	IEEE Electron Devices Society
Starting Page	885
Ending Page	888
Page Count	4
File Size	549902
File Format	PDF
ISSN	07413106
Volume Number	29
Issue Number	8
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-08-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Annealing Amorphous materials Capacitive sensors MOSFETs Silicon germanium Germanium silicon alloys Optical pulses Epitaxial growth Optical device fabrication FETs strained transistor Germanium (Ge) enrichment laser annealing (LA)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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Strained n-Channel Transistors With Silicon Source and Drain Regions and Embedded Silicon/Germanium as Strain-Transfer Structure

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Laser Annealing of Amorphous Germanium on Silicon–Germanium Source/Drain for Strain and Performance Enhancement in pMOSFETs

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