NDLI: Post Hard Breakdown Conduction in MOS Capacitors With Silicon and Aluminum Oxide as Dielectric

Content Provider	IEEE Xplore Digital Library
Author	Avellan, A. Jakschik, S. Tippelt, B. Kudelka, S. Krautschneider, W.
Copyright Year	1980
Abstract	I-V curves as a function of voltage and temperature of MOS capacitors with silicon oxide and aluminum oxide after dielectric breakdown are presented. A different temperature behavior in accumulation is observed. The samples with aluminum oxide show an entirely positive temperature dependence, whereas the samples with silicon oxide have a crossover of the temperature dependent curves. This difference of the two sample types is attributed to the charge distribution according to the material of the breakdown spot, silicon for the case of silicon oxide, and aluminum for aluminum oxide. Thus, in the first case, a p-n junction is formed while a Schottky contact is created in the latter case. Atlas simulations and TEM analysis are presented that confirm this hypothesis.
Sponsorship	IEEE Electron Devices Society
Starting Page	366
Ending Page	368
Page Count	3
File Size	346547
File Format	PDF
ISSN	07413106
Volume Number	29
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-04-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Dielectric breakdown MOS capacitors Silicon Aluminum oxide Temperature dependence Breakdown voltage Electric breakdown P-n junctions Schottky barriers Analytical models MOS devices Current dielectric breakdown
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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