NDLI: Effect of Floating-Body and Stress Bias on NBTI and HCI on 65-nm SOI pMOSFETs

Content Provider	IEEE Xplore Digital Library
Author	Mishra, R. Ioannou, D.E. Mitra, S. Gauthier, R.
Copyright Year	1980
Abstract	Grounded-body (GB) core-logic/high-speed (HS) and input/output (I/O) silicon-on-insulator pMOSFETs from 65-nm technology are shown to degrade more than floating-body (FB) devices under negative bias temperature instability (NBTI) stress. However, in both cases, worst case degradation occurs when stressed under equal gate and drain voltages (V_g = V_d), whereby degradation is simultaneously induced by both NBTI and hot carrier injection (HCI) simultaneously ("concurrent HCI-NBTI"), the relative importance of each mechanism depending on the type of device and the bias level. The degradation of I/O pMOSFETs stressed under V_g = V_d at room temperature shows predominantly NBTI-like behavior at higher stress voltages, whereas it shows concurrent HCI-NBTI behavior at lower stress voltages. By contrast, the degradation of HS pMOSFETs stressed under V_g = V_d shows concurrent HCI-NBTI behavior over the entire stress bias range. In both cases, FB devices degrade more than GB devices for higher stress voltage values, but the FB effects weaken and the degradations become comparable for lower stress bias.
Sponsorship	IEEE Electron Devices Society
Starting Page	262
Ending Page	264
Page Count	3
File Size	419147
File Format	PDF
ISSN	07413106
Volume Number	29
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-03-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Stress Niobium compounds Titanium compounds Human computer interaction MOSFETs Degradation Voltage Silicon on insulator technology Negative bias temperature instability Hot carrier injection silicon-on-insulator (SOI) Concurrent HCI-NBTI hot carrier injection (HCI) negative bias temperature instability (NBTI)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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