NDLI: Radiation Tolerance of Fully-Depleted P-Channel CCDs Designed for the SNAP Satellite

Content Provider	IEEE Xplore Digital Library
Author	Dawson, K. Bebek, C. Emes, J. Holland, S. Jelinsky, S. Karcher, A. Kolbe, W. Palaio, N. Roe, N. Saha, J. Takasaki, K. Guobin Wang
Copyright Year	1963
Abstract	Thick, fully depleted p-channel charge-coupled devices (CCDs) have been developed at the Lawrence Berkeley National Laboratory (LBNL). These CCDs have several advantages over conventional thin, n-channel CCDs, including enhanced quantum efficiency and reduced fringing at near-infrared wavelengths and improved radiation tolerance. Here we report results from the irradiation of CCDs with 12.5 and 55 MeV protons at the LBNL 88-Inch Cyclotron and with 0.1-1 MeV electrons at the LBNL ⁶⁰Co source. These studies indicate that the LBNL CCDs perform well after irradiation, even in the parameters in which significant degradation is observed in other CCDs: charge transfer efficiency, dark current, and isolated hot pixels. Modeling the radiation exposure over a six-year mission lifetime with no annealing, we expect an increase in dark current of 20 e^-/pixel/hr, and a degradation of charge transfer efficiency in the parallel direction of 3 times 10^-6 and 1 times 10^-6 in the serial direction. The dark current is observed to improve with an annealing cycle, while the parallel CTE is relatively unaffected and the serial CTE is somewhat degraded. As expected, the radiation tolerance of the p-channel LBNL CCDs is significantly improved over the conventional n-channel CCDs that are currently employed in space-based telescopes such as the Hubble Space Telescope.
Sponsorship	IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD
Starting Page	1725
Ending Page	1735
Page Count	11
File Size	665979
File Format	PDF
ISSN	00189499
Volume Number	55
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-06-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Satellites Degradation Dark current Charge transfer Annealing Telescopes Laboratories Protons Cyclotrons Electrons radiation damage effects Astrophysics and space instrumentation
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering

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Radiation Tolerance of Fully-Depleted P-Channel CCDs Designed for the SNAP Satellite

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Hot pixel annealing behavior in CCDs irradiated at -84/spl deg/C

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Radiation Tolerance of Fully-Depleted P-Channel CCDs Designed for the SNAP Satellite

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