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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Banno, N. Sakamoto, T. Iguchi, N. Sunamura, H. Terabe, K. Hasegawa, T. Aono, M. |
| Copyright Year | 1963 |
| Abstract | A novel solid-electrolyte nonvolatile switch that we previously developed for programmable large-scale-integration circuits turns on or off when a conducting Cu bridge is formed or dissolved in the solid electrolyte. Cu+ ion migration and an electrochemical reaction are involved in the switching process. For logic applications, we need to adjust its turn-on voltage (V ON), which was too small to maintain the conductance state during logic operations. In this paper, we clarified that V ON is mainly affected by the rate of Cu+ ion migration in the solid electrolyte. Considering the relationship between the migration rate and V ON, we replaced the former electrolyte, Cu2-alphaS, with Ta2O5, which enabled us to appropriately adjust V ON with a smaller Cu+ ion diffusion coefficient. |
| Sponsorship | IEEE Electron Devices Society |
| Starting Page | 3283 |
| Ending Page | 3287 |
| Page Count | 5 |
| File Size | 846828 |
| File Format | |
| ISSN | 00189383 |
| Volume Number | 55 |
| Issue Number | 11 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2008-11-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Copper Switches Programmable logic devices Ions switches Electrochemical devices ions programmable logic device |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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