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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Eneman, G. Wiot, M. Brugere, A. Casain, O.S.I. Sonde, S. Brunco, D.P. De Jaeger, B. Satta, A. Hellings, G. De Meyer, K. Claeys, C. Meuris, M. Heyns, M.M. Simoen, E. |
| Copyright Year | 1963 |
| Abstract | This paper presents an analysis of junction leakage in heavily doped p+/n germanium junctions, targeted for short-channel transistor fabrication. There exists an optimal p+/n junction condition, with a doping concentration of 1 times 1017-5 times 1017 cm-3, where the area-leakage-current density is minimal. Use of a halo-implant condition optimized for our 125-nm gate-length pMOS devices shows less than one decade higher area leakage than the optimal p+/n junction. For even higher doping levels, the leakage density increases strongly. Therefore, careful optimization of p+/n junctions is needed for decananometer germanium transistors. The junction leakage shows good agreement with electrical simulations, although for some implant conditions, more adequate implant models are required. Finally, it is shown that the area-junction static-power consumption for the best junctions remains below the power-density specifications for high-performance applications. |
| Sponsorship | IEEE Electron Devices Society |
| Starting Page | 2287 |
| Ending Page | 2296 |
| Page Count | 10 |
| File Size | 552189 |
| File Format | |
| ISSN | 00189383 |
| Volume Number | 55 |
| Issue Number | 9 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2008-09-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Junctions Semiconductor process modeling Implants Germanium Electric fields Current measurement Logic gates trap-assisted tunneling (TAT) halo implant leakage current MOSFETs p$+/$n junction |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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