NDLI: Rigorous Surface-Potential Solution for Undoped Symmetric Double-Gate MOSFETs Considering Both Electrons and Holes at Quasi NonEquilibrium

Content Provider	IEEE Xplore Digital Library
Author	Xing Zhou Zhaomin Zhu Rustagi, S.C. Guan Huei See Guojun Zhu Shihuan Lin Chengqing Wei Guan Hui Lim
Copyright Year	1963
Abstract	This paper presents a rigorously-derived analytical solution of the Poisson equation with both electrons and holes in pure silicon, which is applied to the analysis of undoped symmetric double-gate transistors. An implicit surface-potential equation is obtained that can be solved by a second-order Newton-Raphson technique along with an appropriate initial guess. Within the assumption of holes at equilibrium that is being used in the existing literature, the new results, when compared with the models based on one carrier, reveal that missing the other carrier in the formulation results in a singularity in the gate capacitance exactly at flatband, which may give trouble for high-frequency analysis, although the errors in surface potentials are below the nano-volt range for all gate voltages. However, the solution without assuming constant hole imref, as presented in this paper for the first time, further pinpoints the inadequacy in existing theories of surface-potential solutions in double-gate MOSFETs with undoped thin bodies, although its application to transport solutions of terminal current/charge models depends highly on the type of source/drain structures and contacts.
Sponsorship	IEEE Electron Devices Society
Starting Page	616
Ending Page	623
Page Count	8
File Size	655658
File Format	PDF
ISSN	00189383
Volume Number	55
Issue Number	2
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-02-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon MOSFETs Logic gates Electric potential Equations Charge carrier processes Mathematical model symmetric double gate Imref MOSFET nonequilibrium Poisson solution surface potential
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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