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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Mohiddon, Md.A. Kumar, R. Goel, P. Yadav, K.L. |
| Copyright Year | 1994 |
| Abstract | The aim of this study is to determine the effect of Nb5+ doping on PZT (65/35) based bulk materials in their structure, micro structure and electrical properties. The Nb content was chosen 0-9 mole%. These materials were prepared by conventional mixed oxide method. X ray diffraction studies suggest the compound to be of rhombohedral perovskite phase. Excess addition of Nb result in pyrochlore and fluorite phase develops in PZT (65/35) sample. Detailed studies of dielectric constant as a function of temperature (40degC to 500degC) and frequency (100 Hz to 1 MHz) suggest that the compounds undergo diffuse type of phase transition. Maximum dielectric constant and resistivity were found to be strongly dependent on doping and measuring frequencies. Using complex impedance analysis micro structural parameters such as bulk and grain boundary resistance, bulk charge carrier concentration and relaxation time were determined |
| Sponsorship | National Natural Science Foundation of China (NSFC) Region Centre Ville de Tours Conseil General D'Indre et Loire ABB IEEE Sandia National Laboratories TOSHIBA |
| File Size | 5007853 |
| File Format | |
| ISSN | 10709878 |
| Volume Number | 14 |
| Issue Number | 1 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2007-02-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Niobium Doping Ceramics Dielectric constant Frequency Dielectric materials Diffraction Temperature Conductivity Dielectric measurements |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electrical and Electronic Engineering |
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