NDLI: 3-D Design and Analysis of Functional NEMS-gate MOSFETs and SETs

Content Provider	IEEE Xplore Digital Library
Author	Pruvost, B. Mizuta, H. Oda, S.
Copyright Year	2002
Abstract	Nanoelectromechanical system (NEMS)-gate metal- oxide-semiconductor field effect transistor (MOSFET) and single- electron transistor (SET) structures are investigated by combining 3-D design and SPICE simulation. First, the metal gate is simulated by using a 3-D simulator, which enables to design realistic 3-D device structures, and its movement is studied for different design parameters. It is demonstrated that a low stiffness design of the structure is essential for a low-voltage actuation. Results are compared with theoretical numerical simulation and a tunable capacitor model is then embedded in a SPICE simulator and coupled either with a transistor model for MOS-NEMS or with a newly developed SET analytical model for SET-NEMS. It is shown that the use of NEMS membrane can add new functionalities to conventional MOSFET and SET, such as very abrupt switching of the current, which can break theoretical limits of MOSFET, or modulation of Coulomb oscillations governing SET characteristics
Sponsorship	IEEE Nanotechnology Council
Starting Page	218
Ending Page	224
Page Count	7
File Size	960107
File Format	PDF
ISSN	1536125X
Volume Number	6
Issue Number	2
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-03-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFETs Nanoelectromechanical systems Capacitors Analytical models FETs Numerical simulation Voltage SPICE Tunable circuits and devices Biomembranes 3-D modeling Analytical modeling metal-oxide-semiconductor field effect transistor (MOSFET) movable gate nanoelectromechanical system (NEMS) single-electron transistor (SET)
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology Electrical and Electronic Engineering Computer Science Applications

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
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3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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