NDLI: Electron Mobility in Silicon Nanowires

Content Provider	IEEE Xplore Digital Library
Author	Ramayya, E.B. Vasileska, D. Goodnick, S.M. Knezevic, I.
Copyright Year	2002
Abstract	The low-field electron mobility in rectangular silicon nanowire (SiNW) transistors was computed using a self-consistent Poisson-Schroumldinger-Monte Carlo solver. The behavior of the phonon-limited and surface-roughness-limited components of the mobility was investigated by decreasing the wire width from 30 to 8 nm, the width range capturing a crossover between two-dimensional and one-dimensional electron transport. The phonon-limited mobility, which characterizes transport at low and moderate transverse fields, is found to decrease with decreasing wire width due to an increase in the electron-phonon wavefunction overlap. In contrast, the mobility at very high transverse fields, which is limited by surface roughness scattering, increases with decreasing wire width due to volume inversion. The importance of acoustic phonon confinement is also discussed briefly
Sponsorship	IEEE Nanotechnology Council
Starting Page	113
Ending Page	117
Page Count	5
File Size	734921
File Format	PDF
ISSN	1536125X
Volume Number	6
Issue Number	1
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Electron mobility Silicon Nanowires Phonons Wire Acoustic scattering Optical scattering MOSFETs Rough surfaces Surface roughness surface roughness silicon nanowires
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology Electrical and Electronic Engineering Computer Science Applications

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Electronic Properties of Silicon Nanowires: Confined Phonons and Surface Roughness

Physical understanding of low-field carrier mobility in silicon MOSFET inversion layer

Numerical simulation study on electron mobility of independent DG MOSFETs

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Effect of surface roughness on quasi-ballistic transport in nano-scale Ge and Si double-gate MOSFETs

Experimental Investigation of Surface-Roughness-Limited Mobility in Uniaxial Strained pMOSFETs

Empirical Model for the Effective Electron Mobility in Silicon Nanowires

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