NDLI: Impacts of SiN-Capping Layer on the Device Characteristics and Hot-Carrier Degradation of nMOSFETs

Content Provider	IEEE Xplore Digital Library
Author	Chia-Yu Lu Horng-Chih Lin Yao-Jen Lee Chih-Cheng Chao
Copyright Year	2001
Abstract	Impacts of silicon nitride (SiN)-capping layer and the associated deposition process on the device characteristics and hot-electron degradation of nMOSFETs are investigated in this paper. The SiN layer used to induce channel strain for mobility enhancement was deposited by a low-pressure chemical vapor deposition. The deposition of the SiN aggravates threshold-voltage roll-off due to additional thermal budget and the strain effect. It is also found that the device hot-electron degradation is worse with the addition of the SiN capping. Furthermore, our results indicate that both the bandgap narrowing caused by the channel strain and the abundant hydrogen species from the precursors of SiN deposition contribute to the aggravated hot-electron effect.
Sponsorship	IEEE Electron Devices Society IEEE Reliability Society
Starting Page	175
Ending Page	180
Page Count	6
File Size	272127
File Format	PDF
ISSN	15304388
Volume Number	7
Issue Number	1
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-03-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Hot carriers MOSFETs Silicon compounds Capacitive sensors Thermal degradation Chemical vapor deposition Chaos Tensile strain Laboratories Control systems tensile strain Hot-electron effect low-pressure chemical vapor deposition (LPCVD) nMOSFET silicon nitride (SiN) capping
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Safety, Risk, Reliability and Quality Electrical and Electronic Engineering

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Local Strained Channel (LSC) nMOSFETs by Different Poly-Si Gate and SiN Capping Layer Thicknesses: Mobility Enhancement, Size Dependence, and Hot Carrier Stress

Mobility enhancement in local strain channel nMOSFETs by stacked a-Si/poly-Si gate and capping nitride

Impacts of precursor flow rate and temperature of PECVD-SiN capping films on strained-channel NMOSFETs

Reliability of strained-channel NMOSFETs with SiN capping layer on hi-wafers with a thin LPCVD-TEOS buffer layer

Improved Hot Carrier Reliability in Strained-Channel NMOSFETS with TEOS Buffer Layer

Optimization of SiN Film by Varying Precursor Flow Conditions and its Impacts on Strained Channel NMOSFETs

Enhanced Strain Effects in 25-nm Gate-Length Thin-Body nMOSFETs With Silicon–Carbon Source/Drain and Tensile-Stress Liner

Impacts of SiN-Capping Layer on the Device Characteristics and Hot-Carrier Degradation of nMOSFETs

Impacts of a buffer layer and hi-wafers on the performance of strained-channel NMOSFETs with SiN capping layer

Impacts of SiN-Capping Layer on the Device Characteristics and Hot-Carrier Degradation of nMOSFETs

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