NDLI: New Gate CD Control Technology Using CF<formula formulatype=inline> <tex>$_{4}$</tex></formula> Plasma Treatment Following HBr/O<formula formulatype=inline> <tex>$_{2}$</tex></formula> Plasma Treatment Step in Gate Etch Process Using Organic BARC

Content Provider	IEEE Xplore Digital Library
Author	Seong Jun Kang Yang Hee Joung Seong Yeol Mun
Copyright Year	1988
Abstract	A new technology of resist trimming in a gate etch process using organic bottom antireflective coating (BARC) for accurate and stable gate critical dimension (CD) control of sub-0.18-mum node technology is presented in this paper. The new method uses an in situ CF₄ plasma treatment following an HBr/O₂ plasma treatment step as a part of the gate etch process to achieve a stable gate CD. The new method controls gate CD by trimming the photo resist masking gate line by reducing the effect of etch by-products, the source of CD variation, after etching organic BARC with HBr/O₂ plasma. It shows the markedly improved gate CD capability over the conventional one using just an HBr/O₂ plasma treatment for the CD control. We confirm that this new method is very useful and effective for the accurate gate CD control for sub-0.18-mum node metal-oxide semiconductor technology
Sponsorship	IEEE Electron Devices Society IEEE Components, Packaging, and Manufacturing Technology Society IEEE Reliability Society IEEE Solid-State Circuits Society
Starting Page	150
Ending Page	153
Page Count	4
File Size	506323
File Format	PDF
ISSN	08946507
Volume Number	20
Issue Number	2
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-05-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Plasma applications Etching Resists Plasma stability Plasma sources Plasma devices Plasma materials processing Lithography Isolation technology Oxidation resist trimming CF$_{4}$ plasma treatment critical dimension (CD) resist gate mask CD
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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