NDLI: Strained Thin-Body p-MOSFET With Condensed Silicon-Germanium Source/Drain for Enhanced Drive Current Performance

Content Provider	IEEE Xplore Digital Library
Author	Kah-Wee Ang King-Jien Chui Madan, A. Lai-Yin Wong Chih-Hang Tung Balasubramanian, N. Ming-Fu Li Samudra, G.S. Yee-Chia Yeo
Copyright Year	1980
Abstract	Strained p-MOSFETs with silicon-germanium (SiGe) source and drain (S/D) stressors were fabricated on thin-body silicon-on-insulator (SOI) substrate using a novel local oxidation or Ge condensation technique. By directly growing SiGe on the S/D regions and followed by a local Ge condensation process, the challenges imposed on Si recess etch on thin-body SOI substrates can be alleviated. In the Ge condensation step, the Ge content in the S/D regions may also be increased. At a gate overdrive of -1 V, strained p-MOSFETs show an enhancement in the saturation drive current I_on of up to 38% over the control p-MOSFETs. This significant I_on enhancement is attributed to strain-induced band structure modification, which reduces the hole effective mass along the transport direction. The improved series resistance of the strained devices with SiGe S/D accounted for approximately one-third of the I_on enhancement.
Sponsorship	IEEE Electron Devices Society
Starting Page	509
Ending Page	512
Page Count	4
File Size	262280
File Format	PDF
ISSN	07413106
Volume Number	28
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-06-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFET circuits Germanium silicon alloys Silicon germanium Capacitive sensors Silicon on insulator technology Strain control CMOS technology Etching Computational modeling Oxidation strain Ge condensation p-MOSFETs silicon-germanium (SiGe)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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