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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Griffoni, A. Gerardin, S. Cester, A. Paccagnella, A. Simoen, E. Claeys, C. |
| Copyright Year | 1963 |
| Abstract | We study the immediate and long-term effects of heavy-ion strikes on 65-nm Fully Depleted SOI MOSFETs with different strain engineering solutions. Some of the phenomena already present in bulk devices, such as drain current collapse, are still observed alongside some new long-term effects concerning the degradation kinetics under electrical stress. On the other side, early breakdown seems to vanish. SOI degradation after heavy-ion strikes and during following electrical stress is shown to depend on the strain level and strain-inducing technique. We interpreted these results in terms of radiation-induced defects in the gate and isolation oxide. |
| Sponsorship | IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD |
| Starting Page | 2257 |
| Ending Page | 2263 |
| Page Count | 7 |
| File Size | 585087 |
| File Format | |
| ISSN | 00189499 |
| Volume Number | 54 |
| Issue Number | 6 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2007-12-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | MOSFETs Degradation Capacitive sensors Electric breakdown Kinetic theory Stress Leakage current CMOS technology Space technology Integrated circuit reliability strain CMOS devices and integrated circuits reliability heavy ions SOI |
| Content Type | Text |
| Resource Type | Article |
| Subject | Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering |
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