NDLI: Junction Passivation for Direct Silicon Bond Hybrid Orientation Technology

Content Provider	IEEE Xplore Digital Library
Author	Joshi, S. Pinto, A. Huang, Y.-T. Wise, R. Cleavelin, R. Seacrist, M. Ries, M. Ramin, M. Freeman, M. Nguyen, B. Matthews, K. Wilks, B. Denning, L. Johnson, C. Bennet, J. Ma, M. Lin, C.-T. Banerjee, S.K.
Copyright Year	1963
Abstract	Direct silicon bonding (DSB) for hybrid orientation technology has recently generated a lot of interest due to the significant performance enhancements reported for PMOS devices that are fabricated on alternative substrate orientations. Significantly higher leakage was observed for P⁺/N diodes if the junction depletion region was located close to the interface between the (110) and (100) Si surfaces. Hydrogen and fluorine passivation of this interface by ion implantation resulted in an order of magnitude improvement in the reverse leakage. In this brief, the experiments that performed using several dose levels of H₂, F, and N implants are described. Electrical characterization data for reverse leakage, forward current, and ideality factors are presented in the form of cumulative probability plots, from which it is concluded that H and F passivation by ion implantation consistently provides a significant improvement in junction leakage, as compared to an unimplanted DSB wafer. An increase in the forward resistance was observed due to the implants, as compared to bulk Si (100) control samples.
Sponsorship	IEEE Electron Devices Society
Starting Page	2045
Ending Page	2050
Page Count	6
File Size	640576
File Format	PDF
ISSN	00189383
Volume Number	54
Issue Number	8
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-08-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon Junctions Passivation Epitaxial growth Bonding Performance evaluation Substrates PMOSFET Direct silicon bonding (DSB) hybrid orientation technology (HOT) interface junction passivation
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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