NDLI: Polycrystalline silicon films and thin-film transistors using solution-based metal-induced crystallization

Content Provider	IEEE Xplore Digital Library
Author	Zhiguo Meng Shuyun Zhao Wu, C. Bo Zhang Man Wong Hoi-Sing Kwok
Copyright Year	2005
Abstract	Polycrystalline silicon (poly-Si) films consisting of dish-like and wadding-like domains were obtained with solution-based metal-induced crystallization (SMIC) of amorphous silicon. The Hall mobility of poly-Si was much higher in dish-like domains than in wadding-like domains. Thin-film transistors (TFTs) have been prepared using those two kinds of poly-Si films as the active layer, followed by the phosphosilicate glass (PSG) nickel gettering. The field effect mobility of dish-like domain poly-Si TFTs and wadding-like poly-Si TFTs were 70~80 cm²/Vmiddots and 40~50 cm²/Vmiddots, respectively. With a multi-gate structure, the leakage current of poly-Si TFTs was reduced by 1 to 2 orders of magnitude. In addition, the gate-induced drain leakage current (GIDL) and uniformity of the drain current distribution were also improved. P-type TFTs fabricated using SMIC exhibited excellent reliability
Sponsorship	IEEE Lasers and Electro-Optics Society Optical Society of America
Starting Page	265
Ending Page	273
Page Count	9
File Size	2205504
File Format	PDF
ISSN	1551319X
Volume Number	2
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-09-01
Publisher Place	U.S.A.
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Semiconductor films Thin film transistors Crystallization Leakage current Amorphous silicon Hall effect Glass Nickel Gettering Current distribution thin-film transistors (TFTs) Metal-induced crystallization (MIC) nickel gettering polycrystalline silicon (poly-Si)
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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