NDLI: Enhancement of Temperature Sensitivity for Metal–Oxide–Semiconductor (MOS) Tunneling Temperature Sensors by Utilizing Hafnium Oxide <formula formulatype=inline><tex>$(hbox{HfO}_{2})$</tex></formula> Film Added on Silicon Dioxide <formula formulatype=inline><tex>$(hbox{SiO}

Content Provider	IEEE Xplore Digital Library
Author	Tsung-Miau Wang Chia-Hua Chang Jenn-Gwo Hwu
Copyright Year	2001
Abstract	In this paper, metal-oxide-semiconductor (MOS) capacitors fabricated on p-type silicon substrate with hafnium oxide (HfO₂) film added on silicon dioxide (SiO₂) were demonstrated as reliable temperature-detecting devices. The saturation current of MOS (p) capacitor with added HfO₂ film is easy to saturate within 0.5 V. From 40 degC to 90degC, each increase of 10degC almost doubles the saturation current. The C-V curves show that the interface properties of Si/SiO₂ and SiO₂/HfO ₂ are good. It was also shown that these devices are reliable even though they had been electrically stressed at various temperatures (30degC~90degC) for 15 000 s. They have the potential to be integrated into the circuits as temperature detectors in the era of ultralarge-scale-integration technology
Sponsorship	IEEE Sensors Council
Starting Page	1468
Ending Page	1472
Page Count	5
File Size	288525
File Format	PDF
ISSN	1530437X
Volume Number	6
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Temperature sensors Tunneling Hafnium oxide MOS capacitors Substrates Semiconductor films Silicon compounds Capacitance-voltage characteristics Integrated circuit reliability Detectors temperature-detecting devices Hafnium oxide $(\hbox{HfO}_{2})$ metal–oxide–semiconductor (MOS) capacitors saturation current silicon dioxide $(\hbox{SiO}_{2})$
Content Type	Text
Resource Type	Article
Subject	Instrumentation Electrical and Electronic Engineering

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Limitations of Poole–Frenkel Conduction in Bilayer $hbox{HfO}_{2}/hbox{SiO}_{2}$ MOS Devices

Effective Modulation of Quadratic Voltage Coefficient of Capacitance in MIM Capacitors Using $hbox{Sm}_{2}hbox{O}_{3}/hbox{SiO}_{2}$ Dielectric Stack

Metal–Oxide–High-$kappa$ Dielectric–Oxide–Semiconductor (MOHOS) Capacitors and Field-Effect Transistors for Memory Applications

Mechanism for Leakage Reduction by La Incorporation in a $hbox{HfO}_{2}hbox{/SiO}_{2}hbox{/Si}$ Gate Stack

Characteristic Instabilities in HfAlO Metal–Insulator–Metal Capacitors Under Constant-Voltage Stress

Electrical Properties of $hbox{Bi}_{5}hbox{Nb}_{3} hbox{O}_{15}$ Thin Film Grown on $hbox{TiN}/hbox{SiO}_{2}/ hbox{Si}$ at Room Temperature for Metal–Insulator–Metal Capacitors

Dielectric Stacking Effect of $hbox{Al}_{2} hbox{O}_{3}$ and $hbox{HfO}_{2}$ in Metal–Insulator–Metal Capacitor

High-Performance Metal–Insulator–Metal Capacitors Using Amorphous $hbox{BaSm}_{2}hbox{Ti}_{4}hbox{O}_{12}$ Thin Film

Fabrication and Properties of $hbox{Pt}/hbox{Bi}_{3.15}hbox{Nd}_{0.85} hbox{Ti}_{3}hbox{O}_{12}/breakhbox{HfO}_{2}/hbox{Si}$ Structure for Ferroelectric DRAM (FEDRAM) FET

Enhancement of Temperature Sensitivity for Metal–Oxide–Semiconductor (MOS) Tunneling Temperature Sensors by Utilizing Hafnium Oxide $(hbox{HfO}_{2})$ Film Added on Silicon Dioxide $(hbox{SiO}_{2})$

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