NDLI: Characterization of Amorphous GMI Thin-Film Meander Trilayers

Content Provider	IEEE Xplore Digital Library
Author	Giouroudi, I. Hauser, H. Musiejovsky, L. Steurer, J.
Copyright Year	2001
Abstract	This paper presents the magnetic properties of CoFeB trilayer thin films in relation to the high-frequency impedance responses. Fifty- and 100-nm-thin amorphous layers with a central 100- and 200-nm-thin Cu layer, respectively, were sputtered onto a thermally oxidized Si wafer. 300-mum-long meanders of 3-20-mum width were structured using a standard mask with various meanders, which were connected in series and were then formed by plasma etching. Magnetization curves, parallel to the easy axis, and hard axis of uniaxial anisotropy, were measured by the magnetooptical Kerr effect exhibiting anisotropy fields of around 2 kA/m and low coercivity in the hard-axis direction, depending on the film thickness. The magnetoimpedance (MI) effect was measured manually from 10 MHz to 1 GHz by means of a network analyzer using the reflected wave through the sample. The maximum effect occurred for both samples at 850 MHz
Sponsorship	IEEE Sensors Council
Starting Page	970
Ending Page	973
Page Count	4
File Size	564405
File Format	PDF
ISSN	1530437X
Volume Number	6
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-08-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Amorphous materials Transistors Plasma measurements Sputtering Anisotropic magnetoresistance Magnetic field measurement Magnetic properties Magnetic films Impedance Plasma applications thin films Giant magnetoimpedance (GMI) effect
Content Type	Text
Resource Type	Article
Subject	Instrumentation Electrical and Electronic Engineering

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