NDLI: Thermomechanical Reliability of Low-Temperature Sintered Silver Die Attached SiC Power Device Assembly

Content Provider	IEEE Xplore Digital Library
Author	Bai, J.G. Guo-Quan Lu
Copyright Year	2001
Abstract	A thermomechanical reliability study was conducted on a low-temperature sintered silver die attached SiC power device assembly. The silver die attachment was formed by sintering nanoscale silver paste in air at 300 degC to form a strong bond between silver- or gold-coated direct-bond-copper substrates and silver-metallized SiC Schottky diodes. Using the 50% drop in the die-shear strength as the failure criterion, an accelerated thermal cycling experiment between 50 degC and 250 degC showed that the silver die attachment can survive more than 4000 cycles, indicating its high thermomechanical reliability at the interested temperature range. Established mainly by scanning electron microscopy/energy-dispersive spectroscopy, the drop of the die-shear strength during the thermal cycling was attributed to the pile-up of creeping dislocations to form microcavities at the grain boundaries of the sintered silver
Sponsorship	IEEE Electron Devices Society IEEE Reliability Society
Starting Page	436
Ending Page	441
Page Count	6
File Size	783471
File Format	PDF
ISSN	15304388
Volume Number	6
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-09-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Thermomechanical processes Silver Silicon carbide Assembly Bonding Schottky diodes Acceleration Temperature distribution Scanning electron microscopy Spectroscopy silver Power semiconductor devices reliability estimation reliability testing
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Safety, Risk, Reliability and Quality Electrical and Electronic Engineering

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