NDLI: RFIC TaN/SrTiO<tex>$_3/$</tex>TaN MIM Capacitors With 35fF<tex>$/muhboxm^2$</tex>Capacitance Density

Content Provider	IEEE Xplore Digital Library
Author	Huang, C.C. Chiang, K.C. Kao, H.L. Chin, A. Chen, W.J.
Copyright Year	2001
Abstract	A very high density of 35 fF/mum² is measured in a radio frequency (RF) metal-insulator-metal (MIM) capacitor using high-kappa (kappa=169) SrTiO₃ fabricated by very large scale integration (VLSI) back-end integration. A very small capacitance reduction of 4.1% from 100kHz to 10GHz, low leakage current of 1times10^-7 A/cm² at 1V are simultaneously measured. The small voltage dependence of a capacitance DeltaC/C of 637ppm is also obtained at 2GHz, which ensures this MIM capacitor useful for high precision circuits operated at a RF regime
Sponsorship	IEEE Microwave Theory and Techniques Society
Starting Page	493
Ending Page	495
Page Count	3
File Size	139566
File Format	PDF
ISSN	15311309
Volume Number	16
Issue Number	9
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-09-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Radiofrequency integrated circuits MIM capacitors Radio frequency Very large scale integration Density measurement Frequency measurement Metal-insulator structures Leakage current Capacitance measurement Current measurement SrTiO Capacitor International Technology Roadmap for Semiconductors (ITRS) metal-insulator-metal (MIM) radio frequency integrated circuit (RF IC)
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electrical and Electronic Engineering

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