NDLI: Robust Cu Dual Damascene Interconnects With Porous SiOCH Films Fabricated by Low-Damage Multi-Hard-Mask Etching Technology

Content Provider	IEEE Xplore Digital Library
Author	Ohtake, H. Tagami, M. Tada, M. Ueki, M. Abe, M. Saito, S. Ito, F. Hayashi, Y.
Copyright Year	1988
Abstract	Low-damage hard-mask (HM) plasma-etching technology for porous SiOCH film (k=2.6) has been developed for robust 65-nm-node Cu dual damascene interconnects (DDIs). No damage is introduced by fluorocarbon plasma etching irrespective of whether rigid (k=2.9) or porous (k=2.6) SiOCH films are used, due to the protective CF-polymer layer deposited on the etched sidewall. The etching selectivity of the SiOCH films to the inorganic HMs is kept high by controlling the radical ratio of carbon relative to oxygen in the etching plasma gas. However, oxidation damage penetrates the films from the sidewalls due to the O₂ plasma used for photoresist ashing. This damage is increased by the porous structure. As a result, we developed a via-first multi-hard-mask process for the DD structure in porous SiOCH film with no exposure to O ₂-ashing plasma, and we controlled the via-taper angle by RF bias during etching. We fabricated robust Cu DDIs with tapered vias in porous SiOCH film that can be applied to 65-nm-node ULSIs and beyond
Sponsorship	IEEE Electron Devices Society IEEE Components, Packaging, and Manufacturing Technology Society IEEE Reliability Society IEEE Solid-State Circuits Society
Starting Page	455
Ending Page	464
Page Count	10
File Size	2080920
File Format	PDF
ISSN	08946507
Volume Number	19
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-11-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Robustness Etching Plasma applications Indium tin oxide Ultra large scale integration Optimal control Laboratories Protection Oxidation Resists
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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