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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Shen, Z.J. Okada, D.N. Lin, F. Anderson, S. Xu Cheng |
| Copyright Year | 1986 |
| Abstract | DC/DC converters to power future CPU cores mandate low-voltage power metal-oxide semiconductor field-effect transistors (MOSFETs) with ultra low on-resistance and gate charge. Conventional vertical trench MOSFETs cannot meet the challenge. In this paper, we introduce an alternative device solution, the large-area lateral power MOSFET with a unique metal interconnect scheme and a chip-scale package. We have designed and fabricated a family of lateral power MOSFETs including a sub-10 V class power MOSFET with a record-low R/sub DS(ON)/ of 1m/spl Omega/ at a gate voltage of 6V, approximately 50% of the lowest R/sub DS(ON)/ previously reported. The new device has a total gate charge Q/sub g/ of 22nC at 4.5V and a performance figures of merit of less than 30m/spl Omega/-nC, a 3/spl times/ improvement over the state of the art trench MOSFETs. This new MOSFET was used in a 100-W dc/dc converter as the synchronous rectifiers to achieve a 3.5-MHz pulse-width modulation switching frequency, 97%-99% efficiency, and a power density of 970W/in/sup 3/. The new lateral MOSEFT technology offers a viable solution for the next-generation, multimegahertz, high-density dc/dc converters for future CPU cores and many other high-performance power management applications. |
| Sponsorship | IEEE Power Electronics Society |
| Starting Page | 11 |
| Ending Page | 17 |
| Page Count | 7 |
| File Size | 1219746 |
| File Format | |
| ISSN | 08858993 |
| Volume Number | 21 |
| Issue Number | 1 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2006-01-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | MOSFET circuits Power MOSFET DC-DC power converters MOS devices FETs Chip scale packaging Semiconductor device packaging Voltage Rectifiers Pulse width modulation converters synchronous rectifier DC/DC converter power metal-oxide semiconductor field-effect transistors (MOSFETs) |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electrical and Electronic Engineering |
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