NDLI: Low-frequency noise measurement and analysis in organic light-emitting diodes

Content Provider	IEEE Xplore Digital Library
Author	Lin Ke Xin Yue Zhao Kumar, R.S. Soo Jin Chua
Copyright Year	1980
Abstract	Low-frequency noise characteristics of organic light-emitting diodes are investigated. Two noise components were found in experimental low-frequency noise records, namely: 1) 1/f Gaussian noise from device bulk materials and 2) an excessive frequency-related part of noise related to device interfaces or defects and traps. 1/f noise is said to be related to carrier mobility. Degradation, especially photo-oxidation of the electroluminescence polymer, is a possible reason that affects carrier mobility. The excessive part of noise is believed to be related to the carrier numbers and could come from the interface deterioration, defects and traps generation and furnish. The excessive part of noise increases much faster during device stress. This shows that the degradation related interface defects and traps is much faster.
Sponsorship	IEEE Electron Devices Society
Starting Page	555
Ending Page	557
Page Count	3
File Size	105403
File Format	PDF
ISSN	07413106
Volume Number	27
Issue Number	7
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-07-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Low-frequency noise Noise measurement Organic light emitting diodes Gaussian noise Frequency Thermal degradation Electroluminescence Polymers Noise generators Stress 1/f noise organic light-emitting diode (OLED)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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