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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Der-Feng Guo |
| Copyright Year | 1980 |
| Abstract | A Schottky-contact triangular-barrier optoelectronic switch (STOS), grown by molecular beam epitaxy, has been fabricated. The triangular barrier, formed by inserting an InGaAs delta-doped (/spl delta/-doped) quantum well into an n/sup -/-GaAs layer, provides a potential well for hole accumulation. Due to the hole accumulation in the /spl delta/-doped well and the sequential avalanche multiplications in the reverse-biased p-n and metal-semiconductor junctions, a double S-shaped negative-differential-resistance phenomenon is observed in the current-voltage (I-V) characteristics. The STOS shows a flexible optical function related to the triangular barrier height controllable by incident light. The multistate is switchable by both optical and electrical inputs. |
| Sponsorship | IEEE Electron Devices Society |
| Starting Page | 37 |
| Ending Page | 39 |
| Page Count | 3 |
| File Size | 98887 |
| File Format | |
| ISSN | 07413106 |
| Volume Number | 27 |
| Issue Number | 1 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2006-01-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Optical bistability Molecular beam epitaxial growth Optical switches Communication switching Indium gallium arsenide Potential well P-n junctions Stimulated emission Optical devices Voltage triangular barrier Avalanche multiplication hole accumulation negative differential resistance optoelectronic switch |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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