NDLI: Control of Self-Heating in Thin Virtual Substrate Strained Si MOSFETs

Content Provider	IEEE Xplore Digital Library
Author	Olsen, S.H. Escobedo-Cousin, E. Varzgar, J.B. Agaiby, R. Seger, J. Dobrosz, P. Chattopadhyay, S. Bull, S.J. O'Neill, A.G. Hellstrom, P.-E. Edholm, J. Ostling, M. Lyutovich, K.L. Oehme, M. Kasper, E.
Copyright Year	1963
Abstract	This paper presents the first results and analysis of strained Si n-channel MOSFETs fabricated on thin SiGe virtual substrates. Significant improvements in electrical performance are demonstrated compared with Si control devices. The impact of SiGe device self-heating is compared for strained Si MOSFETs fabricated on thin and thick virtual substrates. This paper demonstrates that by using high-quality thin virtual substrates, the compromised performance enhancements commonly observed in short-gate-length MOSFETs and high-bias conditions due to self-heating in conventional thick virtual substrate devices are eradicated. The devices were fabricated with a 2.8-nm gate oxide and included NiSi to reduce the parasitic series resistance. The strained layers grown on the novel substrates comprising 20% Ge did not relax during fabrication. Good on-state performance, off-state performance, and cross-wafer uniformity are demonstrated. The results show that thin virtual substrates have the potential to circumvent the major issues associated with conventional virtual substrate technology. A promising solution for realizing high-performance strained Si devices suitable for a wide range of applications is thus presented
Sponsorship	IEEE Electron Devices Society
Starting Page	2296
Ending Page	2305
Page Count	10
File Size	457737
File Format	PDF
ISSN	00189383
Volume Number	53
Issue Number	9
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-09-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	virtual substrate MOSFETs self-heating silicon germanium strained silicon
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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