NDLI: Copper-Airbridged Low-Noise GaAs PHEMT With<tex>$hboxTi/hboxWN_x/hboxTi$</tex>Diffusion Barrier for High-Frequency Applications

Content Provider	IEEE Xplore Digital Library
Author	Cheng-Shih Lee Yi-Chung Lien Chang, E.Y. Huang-Choung Chang Szu-Houng Chen Ching-Ting Lee Li-Hsin Chu Shang-Wen Chang Yen-Chang Hsieh
Copyright Year	1963
Abstract	A GaAs pseudomorphic HEMT (PHEMT) with Cu-metallized interconnects was successfully developed. Sputtered WN_x was used as the diffusion barrier and Ti was used as the adhesion layer to improve the adhesion between WN_x/Cu interface in the thin-metal structure. After copper metallization, the PHEMTs were passivated with silicon nitride to avoid copper oxidation. The Cu-airbridged PHEMT showed the saturation I_DS was 250 mA/mm and the g_m was 456 mS/mm. The Ti adhesion layer plays a significant role on the g _m and V_p uniformity of the Cu-metallized PHEMTs. The GaAs PHEMTs with Ti/WN_x/Ti/Cu multilayer have better noise figure and associated gain than those of the devices without the Ti adhesion layer. The fabricated Cu-metallized GaAs PHEMT with Ti/WN _x/Ti/Cu multilayer has a noise figure of 0.76 dB and an associated gain of 8.8 dB at 16 GHz. The cutoff frequency (f_T) is 70 GHz when biased at V_DS=1.5V. These results show that the Ti/WN_x/Ti multilayer can serve as a good diffusion barrier for Cu metallization process of airbridge interconnects on GaAs lownoise PHEMTs
Sponsorship	IEEE Electron Devices Society
Starting Page	1753
Ending Page	1758
Page Count	6
File Size	721231
File Format	PDF
ISSN	00189383
Volume Number	53
Issue Number	8
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-08-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	pseudomorphic HEMT (PHEMT) Airbridge copper metallization diffusion barrier GaAs noise figure
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Copper airbridged low noise gaas phemt with wnx as the diffusion barrier.

Copper-airbridged low-noise gaas phemt with ti/wnx/ti diffusion barrier for high-frequency applications.

Copper Airbridged Low Noise GaAs PHEMT with WNx as the Diffusion Barrier

MOSFETs RF Noise Optimization via Channel Engineering

Backside copper metallization of GaAs MESFETs using TaN as the diffusion barrier

2 V-operated InGaP-AlGaAs-InGaAs enhancement-mode pseudomorphic HEMT

An MMIC receiver front-end design for 2.4GHz frequency band applications in 0.2μm GaAs pseudomorphic HEMT process

The Charge-Controlled Nonlinear Noise Modeling Approach for the Design of MMIC GaAs-pHEMT VCOs for Space Applications

Quarter-micrometer low-noise pseudomorphic GaAs HEMTs with extremely low dependence of the noise figure on drain-source current

Copper-Airbridged Low-Noise GaAs PHEMT With$hboxTi/hboxWN_x/hboxTi$Diffusion Barrier for High-Frequency Applications

Similar Documents

Copper airbridged low noise gaas phemt with wnx as the diffusion barrier.

Copper-airbridged low-noise gaas phemt with ti/wnx/ti diffusion barrier for high-frequency applications.

Copper Airbridged Low Noise GaAs PHEMT with WNx as the Diffusion Barrier

MOSFETs RF Noise Optimization via Channel Engineering

Backside copper metallization of GaAs MESFETs using TaN as the diffusion barrier

2 V-operated InGaP-AlGaAs-InGaAs enhancement-mode pseudomorphic HEMT

An MMIC receiver front-end design for 2.4GHz frequency band applications in 0.2μm GaAs pseudomorphic HEMT process

The Charge-Controlled Nonlinear Noise Modeling Approach for the Design of MMIC GaAs-pHEMT VCOs for Space Applications

Quarter-micrometer low-noise pseudomorphic GaAs HEMTs with extremely low dependence of the noise figure on drain-source current

Copper-Airbridged Low-Noise GaAs PHEMT With$hboxTi/hboxWN_x/hboxTi$Diffusion Barrier for High-Frequency Applications