NDLI: Generation-recombination noise in pseudomorphic Modulation-doped Al/sub 0.2/Ga/sub 0.8/As/In/sub 0.1/Ga/sub 0.9/As/GaAs micro-Hall devices

Content Provider	IEEE Xplore Digital Library
Author	Kunets, V.P. Pomraenke, R. Dobbert, J. Kissel, H. Muller, U. Kostial, H. Wiebicke, E. Tarasov, G.G. Mazur, Y.I. Masselink, W.T.
Copyright Year	2001
Abstract	The noise spectrum in micro-Hall devices based on pseudomorphic Al/sub 0.2/Ga/sub 0.8/As/In/sub 0.1/Ga/sub 0.9/As/GaAs modulation-doped heterostructures was measured between 4 Hz and 65 kHz, allowing components due to thermal, 1/f, and generation-recombination to be characterized. Applying deep level noise spectroscopy (DLNS) in the temperature range of 77-300 K to analyze the generation-recombination part of the spectrum, two electron traps contributing to noise density were identified. An emission activation energy of 474 meV was measured for the dominant trap, corresponding to the well-known DX center originating from the AlGaAs barrier. The other deep level, with an emission activation energy of 242 meV, is probably related to defects in the InGaAs layer. The structures under investigation resulted in high-performance micro-Hall devices: a supply-current-related sensitivity up to 725 V/spl middot/A/sup -1//spl middot/T/sup -1/ at 77 K independent of bias current, a signal-to-noise sensitivity of 155 dB/spl middot/T/sup -1/ and a detection limit of 340 pT/spl middot/mm/spl middot/Hz/sup -1/2/ at 77 K were measured.
Sponsorship	IEEE Sensors Council
Starting Page	883
Ending Page	888
Page Count	6
File Size	625824
File Format	PDF
ISSN	1530437X
Volume Number	5
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-10-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Noise generators Epitaxial layers Acoustical engineering Noise level Electron traps Gallium arsenide Noise measurement Character generation Spectroscopy Temperature distribution micro-Hall device deep level noise spectroscopy generation-recombination noise
Content Type	Text
Resource Type	Article
Subject	Instrumentation Electrical and Electronic Engineering

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