NDLI: Room temperature performance of low threshold 1.34-1.44-/spl mu/m GaInNAs-GaAs quantum-well lasers grown by molecular beam epitaxy

Content Provider	IEEE Xplore Digital Library
Author	Hierro, A. Ulloa, J.M. Calleja, E. Damilano, B. Barjon, J. Duboz, J.-Y. Massies, J.
Copyright Year	1989
Abstract	Room temperature lasing emission at 1.338 and 1.435 /spl mu/m with threshold current densities of 1518 and 1755 A/cm/sup 2/, respectively, is obtained in broad area GaInNAs-GaAs laser diodes (LDs) grown by molecular beam epitaxy. The 1.338-/spl mu/m LDs show a power output per facet up to 0.20 W/A, a characteristic temperature (T/sub 0/) of 78 K, and an external transparency current density (J/sub tr/) of 0.77 kA/cm/sup 2/. Increasing the lasing wavelength to 1.435 /spl mu/m results in a larger J/sub tr/ of 1.16 kA/cm/sup 2/ and a lower T/sub 0/ of 62 K, due to larger nonradiative recombination. However, the 1.435-/spl mu/m LDs still display a power output per facet up to 0.15 W/A, and a high internal quantum efficiency of 52%. These improved performances are achieved without the need to use strain compensation layers, Sb as a surfactant during the quantum-well growth, or a postgrowth thermal anneal cycle.
Sponsorship	IEEE Lasers and Electro-Optics Society
Starting Page	1142
Ending Page	1144
Page Count	3
File Size	163576
File Format	PDF
ISSN	10411135
Volume Number	17
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-06-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Temperature Quantum well lasers Molecular beam epitaxial growth Threshold current Diode lasers Current density Radiative recombination Displays Capacitive sensors Quantum wells quantum-well (QW) lasers 1.45- GaInNAs molecular beam epitaxy (MBE)
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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