NDLI: Manufacturability of 20-nm ultrathin body fully depleted SOI devices with FUSI metal gates

Content Provider	IEEE Xplore Digital Library
Author	Krivokapic, Z. Maszara, W.P. Ming-Ren Lin
Copyright Year	1988
Abstract	Ultrathin body (UTB) fully depleted silicon-on-insulator (FDSOI) devices show great performance due to undoped channels and excellent electrostatic control. Very high drive currents and good off-state leakage, ideal subthreshold slope, and small drain-induced barrier lowering (DIBL) have been reported with devices as short as 20 nm. The ultrathin channel enables high device performance, but it imposes a new set of problems. The control of the silicon thickness has become the dominant source of device variations. Selective epitaxial growth has become a necessity to achieve high performance and reliable contacts to UTB FDSOI devices. This work discusses silicon thickness control, selective epitaxial growth, and the mid-gap gate module needed for fully depleted devices. Very good control of short channel effect is shown and drive current fluctuations are discussed.
Sponsorship	IEEE Electron Devices Society IEEE Components, Packaging, and Manufacturing Technology Society IEEE Reliability Society IEEE Solid-State Circuits Society
Starting Page	5
Ending Page	12
Page Count	8
File Size	1730838
File Format	PDF
ISSN	08946507
Volume Number	18
Issue Number	1
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-02-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Manufacturing Silicidation Silicon on insulator technology Thickness control Epitaxial growth Dielectrics Electrostatics Fluctuations Drives Immune system Dopant fluctuations full silicidation (FUSI) fully depleted silicon-on-insulator (FDSOI) selective epi silicon thickness control ultrathin body (UTB)
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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Extended MASTAR Modeling of DIBL in UTB and UTBB SOI MOSFETs

Ultrathin-body SOI devices as a CMOS technology downscaling option: RF perspective

Analytical Compact Model for Lightly Doped Nanoscale Ultrathin-Body and Box SOI MOSFETs With Back-Gate Control

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The spacer/replacer concept: a viable route for sub-100 nm ultrathin-film fully-depleted SOI CMOS

Hole transport in UTB MOSFETs in strained-Si directly on insulator with strained-Si thickness less than 5 nm

Manufacturability of 20-nm ultrathin body fully depleted SOI devices with FUSI metal gates

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