NDLI: A high-efficiency CMOS image sensor with air gap in situ MicroLens (AGML) fabricated by 0.18-/spl mu/m CMOS technology

Content Provider	IEEE Xplore Digital Library
Author	Hsu, T.H. Fang, Y.K. Yaung, D.N. Wuu, S.G. Chien, H.C. Tseng, C.H. Yao, L.L. Wang, W.D. Wang, C.S. Chen, S.F.
Copyright Year	1980
Abstract	The air gap in situ microlens (AGML) above-pixel sensor with 0.18-/spl mu/m CMOS image sensor technology has been successfully developed to dramatically improve the optical crosstalk and pixel sensitivity. We demonstrated excellent crosstalk diminution with the structure on small pixels. Compared with conventional 2.8 /spl mu/m square pixel, adopting the AGML can reduce the optical crosstalk up to 64%, and provide 21% in enhancement of photosensitivity at 0/spl deg/ incident angle. Furthermore, under 20/spl deg/ incident angle the optical crosstalk reduction and sensitivity enhancement are increased to 89% and 122%, respectively. Therefore, the AGML structure makes pixel size be further scaled down to less than 2.8 /spl mu/m square and maintain good performance.
Sponsorship	IEEE Electron Devices Society
Starting Page	634
Ending Page	636
Page Count	3
File Size	256954
File Format	PDF
ISSN	07413106
Volume Number	26
Issue Number	9
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-09-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	CMOS image sensors CMOS technology Lenses Microoptics Optical crosstalk Optical sensors Computational Intelligence Society Colored noise Dielectrics Scanning electron microscopy microlens Air gap air gap in situ microlens (AGML) crosstalk and sensitivity image sensor
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Color mixing improvement of CMOS image sensor with air-gap-guard ring in deep-submicrometer CMOS technology

Analysis of Low-Dark-Current, High-Sensitivity, Low-Optical-Crosstalk, and Small-Pixel-Size Pinned Photodiode With No-Gap Microlens

Measurement of High Sensitivity and Low Crosstalk of Zero-Space Microlens for 2.8- $muhbox{m}$-Pitch Active Pixel Sensor

A MOS Image Sensor With a Digital-Microlens

Light guide for pixel crosstalk improvement in deep submicron CMOS image sensor

The mechanism and evaluation of hot-carrier-induced performance degradation in 0.18-/spl mu/m CMOS image sensor

0.18-/spl mu/m CMOS Bluetooth analog receiver with -88-dBm sensitivity

CMOS active pixel image sensors fabricated using a 1.8-V, 0.25-/spl mu/m CMOS technology

A 0.18-/spl mu/m CMOS bioluminescence detection lab-on-chip

A high-efficiency CMOS image sensor with air gap in situ MicroLens (AGML) fabricated by 0.18-/spl mu/m CMOS technology

Similar Documents

Color mixing improvement of CMOS image sensor with air-gap-guard ring in deep-submicrometer CMOS technology

Analysis of Low-Dark-Current, High-Sensitivity, Low-Optical-Crosstalk, and Small-Pixel-Size Pinned Photodiode With No-Gap Microlens

Measurement of High Sensitivity and Low Crosstalk of Zero-Space Microlens for 2.8- $muhbox{m}$-Pitch Active Pixel Sensor

A MOS Image Sensor With a Digital-Microlens

Light guide for pixel crosstalk improvement in deep submicron CMOS image sensor

The mechanism and evaluation of hot-carrier-induced performance degradation in 0.18-/spl mu/m CMOS image sensor

0.18-/spl mu/m CMOS Bluetooth analog receiver with -88-dBm sensitivity

CMOS active pixel image sensors fabricated using a 1.8-V, 0.25-/spl mu/m CMOS technology

A 0.18-/spl mu/m CMOS bioluminescence detection lab-on-chip

A high-efficiency CMOS image sensor with air gap in situ MicroLens (AGML) fabricated by 0.18-/spl mu/m CMOS technology