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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Yu-Hsien Lin Chao-Hsin Chien Ching-Tzung Lin Chun-Yen Chang Tan-Fu Lei |
| Copyright Year | 1980 |
| Abstract | In this letter, we demonstrate high-performance nonvolatile HfO/sub 2/ nanocrystal memory utilizing spinodal phase separation of Hf-silicate thin film by 900/spl deg/C rapid thermal annealing. With this technique, a remarkably high nanocrystal density of as high as 0.9 /spl sim/ 1.9 /spl times/ 10/sup 12/ cm/sup -2/ with an average size <10 nm can be easily achieved. Because HfO/sub 2/ nanocrystals are well embedded inside an SiO/sub 2/-rich matrix and due to their sufficiently deep energy level, we, for the first time, have demonstrated superior characteristics of the nanocrystal memories in terms of a considerably large memory window, high-speed program/erase (P/E) (1 /spl mu/s/0.1 ms), long retention time greater than 10/sup 8/ s for 10% charge loss, and excellent endurance after 10/sup 6/ P/E cycles. |
| Sponsorship | IEEE Electron Devices Society |
| Starting Page | 154 |
| Ending Page | 156 |
| Page Count | 3 |
| File Size | 407514 |
| File Format | |
| ISSN | 07413106 |
| Volume Number | 26 |
| Issue Number | 3 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2005-03-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Nonvolatile memory Nanocrystals Hafnium oxide Rapid thermal annealing CMOS technology Plasma temperature Fabrication Silicon Spectroscopy Chaos phase separation nanocrystals nonvolatile memories |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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