NDLI: Analysis of transit times and minority carrier mobility in n-p-n 4H-SiC bipolar junction transistors

Content Provider	IEEE Xplore Digital Library
Author	Feng Zhao Perez, I. Chih-Fang Huang Torvik, J. Van Zeghbroeck, B.
Copyright Year	1963
Abstract	An analysis of the transit times and minority carrier mobility in n-p-n 4H-SiC RF bipolar junction transistors is presented. These parameters were extracted from small signal RF measurements on 4H-SiC RF transistors with three different base thicknesses: 100, 140, and 200 nm. The study shows that the room temperature minority carrier electron mobility is 215 cm/sup 2//V/spl middot/s for a base Al doping of N/sub B/=4/spl times/10/sup 18/ cm/sup -3/. The analysis reveals that the collector charging time /spl tau//sub C/ and the parasitic charging time /spl tau//sub P/ from the capacitance between metal pads and the underlying collector region have a significant effect on the transistors RF performance. The calculated RF gain is in good agreement with the measured results.
Sponsorship	IEEE Electron Devices Society
Starting Page	2541
Ending Page	2545
Page Count	5
File Size	455528
File Format	PDF
ISSN	00189383
Volume Number	52
Issue Number	12
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Power bipolar transistors Charge carrier mobility Charge carrier processes Silicon materials/devices transit time Bipolar junction transistors (BJTs) 4H-SiC minority carrier mobility transit frequency
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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Temperature dependence of the current gain in power 4H-SiC NPN BJTs

Base-transit-time model considering field dependent mobility for BJTs operating at high-level injection

Fabrication and Characterization of High-Current-Gain 4H-SiC Bipolar Junction Transistors

Fabrication and characterization of high current gain (/spl beta/=430) and high power (23 A-500 V) 4H-SiC hybrid Darlington bipolar transistor

High temperature SiC trench gate p-IGBTs

Surface-Passivation Effects on the Performance of 4H-SiC BJTs

High-Voltage 4H-SiC Bipolar Junction Transistors With Epitaxial Regrowth of the Base Contact

Evaluation of high-voltage 4H-SiC switching devices

Implantation-Free 4H-SiC Bipolar Junction Transistors With Double Base Epilayers

Analysis of transit times and minority carrier mobility in n-p-n 4H-SiC bipolar junction transistors

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Temperature dependence of the current gain in power 4H-SiC NPN BJTs

Base-transit-time model considering field dependent mobility for BJTs operating at high-level injection

Fabrication and Characterization of High-Current-Gain 4H-SiC Bipolar Junction Transistors

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