NDLI: Threshold voltage control in NiSi-gated MOSFETs through SIIS

Content Provider	IEEE Xplore Digital Library
Author	Kedzierski, J. Boyd, D. Cabral Jr., C. Ronsheim, P. Zafar, S. Kozlowski, P.M. Ott, J.A. Meikei Ieong
Copyright Year	1963
Abstract	Complete gate silicidation has recently been demonstrated as an excellent technique for the integration of metal gates into MOSFETs. From the various silicide gate materials NiSi has been shown to be the most scalable. In this paper, a versatile method for controlling the workfunction of an NiSi gate is presented. This method relies on doping the poly-Si with various impurities prior to silicidation. The effect of various impurities including B, P, As, Sb, In, and Al is described. The segregation of the impurities from the poly-Si to the silicide interface during the silicidation step is found to cause the NiSi workfunction shift. The effect of the segregated impurities on gate capacitance, mobility, local workfunction stability, and adhesion is studied.
Sponsorship	IEEE Electron Devices Society
Starting Page	39
Ending Page	46
Page Count	8
File Size	918178
File Format	PDF
ISSN	00189383
Volume Number	52
Issue Number	1
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFETs Semiconductor device doping Impurities Voltage control Nickel compounds workfunction engineering Dual silicidation full silicidation (FUSI) gate workfunction metal gate mid-gap gate NiSi silicidation-induced impurity segregation (SIIS) silicide gate thin body threshold voltage transistor scaling ultrathin body undoped body
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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Threshold voltage control in NiSi-gated MOSFETs through silicidation induced impurity segregation (SIIS)

Fabrication of metal gated FinFETs through complete gate silicidation with Ni

Effect of SIIS on work function of self-aligned PtSi FUSI metal-gated capacitors

Dopant-Segregated Schottky Source/Drain FinFET With a NiSi FUSI Gate and Reduced Leakage Current

Impacts of Dopant Segregation on the Performance and Interface-State Density of the MOSFET With FUSI NiSi Gate

Demonstration of short-channel self-aligned Pt/sub 2/Si-FUSI pMOSFETs with low threshold voltage (-0.29 V) on SiON and HfSiON

Modulation of the workfunction of Ni fully silicided gates by doping: dielectric and silicide phase effects

Tunable work function in fully nickel-silicided polysilicon gates for metal gate MOSFET applications

Development of a Full Silicidation (FUSI) Process for Nickel Silicide

Threshold voltage control in NiSi-gated MOSFETs through SIIS

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Dopant-Segregated Schottky Source/Drain FinFET With a NiSi FUSI Gate and Reduced Leakage Current

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