NDLI: Low-voltage-swing monolithic dc-dc conversion

Content Provider	IEEE Xplore Digital Library
Author	Kursun, V. Narendra, S.G. De, V.K. Friedman, E.G.
Copyright Year	2004
Abstract	A low-voltage-swing MOSFET gate drive technique is proposed in this paper for enhancing the efficiency characteristics of high-frequency-switching dc-dc converters. The parasitic power dissipation of a dc-dc converter is reduced by lowering the voltage swing of the power transistor gate drivers. A comprehensive circuit model of the parasitic impedances of a monolithic buck converter is presented. Closed-form expressions for the total power dissipation of a low-swing buck converter are proposed. The effect of reducing the MOSFET gate voltage swings is explored with the proposed circuit model. A range of design parameters is evaluated, permitting the development of a design space for full integration of active and passive devices of a low-swing buck converter on the same die, for a target CMOS technology. The optimum gate voltage swing of a power MOSFET that maximizes efficiency is lower than a standard full voltage swing. An efficiency of 88% at a switching frequency of 102 MHz is achieved for a voltage conversion from 1.8 to 0.9 V with a low-swing dc-dc converter based on a 0.18-/spl mu/m CMOS technology. The power dissipation of a low-swing dc-dc converter is reduced by 27.9% as compared to a standard full-swing dc-dc converter.
Sponsorship	IEEE Circuits and Systems Society
Starting Page	241
Ending Page	248
Page Count	8
File Size	485509
File Format	PDF
ISSN	15497747
Volume Number	51
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2004-05-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	DC-DC power converters Voltage CMOS technology MOSFET circuits Power dissipation Buck converters Space technology Power transistors Driver circuits Impedance
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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