NDLI: Collapse of MOSFET drain current after soft breakdown

Content Provider	IEEE Xplore Digital Library
Author	Cester, A. Paccagnella, A. Ghidini, G. Deleonibus, S. Guegan, G.
Copyright Year	2001
Abstract	Gate-oxide soft breakdown (SB) can have a severe impact on MOSFET performance even when not producing any large increase of the gate leakage current. The SB effect on the MOSFET characteristics strongly depends on the channel width W: drain saturation current and MOSFET transconductance dramatically drop in transistors with small W after SB. As W increases, the SB effect on the drain current fades. The drain saturation current and transconductance collapse is due to the formation of an oxide defective region around the SB spot, whose area is much larger than the SB conductive path. Similar degradation can be observed even in heavy ion irradiated MOSFETs where localized damaged oxide regions are generated by the impinging ions without producing any increase of gate leakage current.
Sponsorship	IEEE Electron Devices Society IEEE Reliability Society
Starting Page	63
Ending Page	72
Page Count	10
File Size	581135
File Format	PDF
ISSN	15304388
Volume Number	4
Issue Number	1
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2004-03-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFET circuits Electric breakdown Leakage current Transconductance Energy consumption Signal to noise ratio Circuit noise Breakdown voltage Degradation Failure analysis
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Safety, Risk, Reliability and Quality Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Collapse of MOSFET drain current after soft breakdown and its dependence on the transistor aspect ratio W/L

Subbreakdown drain leakage current in MOSFET

Impact of soft and hard breakdown on analog and digital circuits

Gate oxide multiple soft breakdown (Multi-SBD) impact on CMOS inverter

Intrinsic reliability projections for a thin JVD silicon nitride gate dielectric in P-MOSFET

MOSFET behaviour after oxide breakdown

MOSFET drain breakdown voltage

Influence of soft breakdown on NMOSFET device characteristics

Reversible leakage current switching in thin gate oxides - soft breakdown or noise? [MOSFETs]

Collapse of MOSFET drain current after soft breakdown

Similar Documents

Collapse of MOSFET drain current after soft breakdown and its dependence on the transistor aspect ratio W/L

Subbreakdown drain leakage current in MOSFET

Impact of soft and hard breakdown on analog and digital circuits

Gate oxide multiple soft breakdown (Multi-SBD) impact on CMOS inverter

Intrinsic reliability projections for a thin JVD silicon nitride gate dielectric in P-MOSFET

MOSFET behaviour after oxide breakdown

MOSFET drain breakdown voltage

Influence of soft breakdown on NMOSFET device characteristics

Reversible leakage current switching in thin gate oxides - soft breakdown or noise? [MOSFETs]

Collapse of MOSFET drain current after soft breakdown