NDLI: Power and linearity characteristics of field-plated recessed-gate AlGaN-GaN HEMTs

Content Provider	IEEE Xplore Digital Library
Author	Chini, A. Buttari, D. Coffie, R. Shen, L. Heikman, S. Chakraborty, A. Keller, S. Mishra, U.K.
Copyright Year	1980
Abstract	Record power density and high-efficiency operation with AlGaN-GaN high-electron mobility transistor (HEMT) devices have been achieved by adopting a field-plated gate-recessed structure. Devices grown on SiC substrate yielded very high power density (18.8 W/mm with 43% power-added efficiency (PAE) as well as high efficiency (74% with 6 W/mm) under single-tone continuous-wave testing at 4 GHz. Devices also showed excellent linearity characteristics when measured under two-tone continuous-wave signals at 4 GHz. When biased in deep-class AB (33 mA/mm, 3% I/sub max/) device maintained a carrier to third-order intermodulation ratio of 30 dBc up to a power level of 2.4 W/mm with 53% PAE; increasing bias current to 66 mA/mm (6% I/sub max/) allowed high linear operation (45 dBc) up to a power level of 1.4 W/mm with 38% PAE.
Sponsorship	IEEE Electron Devices Society
Starting Page	229
Ending Page	231
Page Count	3
File Size	135243
File Format	PDF
ISSN	07413106
Volume Number	25
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2004-05-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Linearity HEMTs MODFETs Silicon carbide Testing Microwave devices FETs Substrates Chemical vapor deposition Gallium nitride
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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