NDLI: The role of the mercury-Si Schottky-barrier height in /spl Psi/-MOSFETs

Content Provider	IEEE Xplore Digital Library
Author	Choi, J.Y. Ahmed, S. Dimitrova, T. Chen, J.T.C. Schroder, D.K.
Copyright Year	1963
Abstract	Pseudo-MOSFETs (/spl Psi/-MOSFET) are routinely used for silicon-on-insulator (SOI) material characterization, allowing threshold voltage, electron and hole mobility, doping density, oxide charge, interface trap density, etc. to be determined. The HgFET, one version of the /spl Psi/-MOSFET, uses mercury source and drain contacts. It is a very effective SOI test structure, but its current-voltage behavior is critically dependent on the Hg-Si interface. We have investigated this interface through current-voltage measurements of HgFETs and Schottky diodes and through device modeling. We show that modest barrier height changes of 0.2 eV lead to current changes of up to three orders of magnitude. Etching the Si surface in a mild HF :H/sub 2/O solution can easily change barrier heights and we attribute this behavior to Si surface passivation of dangling bonds. As this surface passivation diminishes with time, the Si surface becomes a more active generation site and the barrier height of the Hg-Si interface changes, taking on the order of 50-100 h at room temperature in air.
Sponsorship	IEEE Electron Devices Society
Starting Page	1380
Ending Page	1384
Page Count	5
File Size	491427
File Format	PDF
ISSN	00189383
Volume Number	51
Issue Number	9
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2004-09-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFETs Silicon on insulator technology Semiconductor device modeling Schottky barriers Charge carrier lifetime Interface phenomena Charge carrier mobility Capacitance measurement Voltage measurement
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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The role of the Mercury-Si Schottky-barrier height in /spl Psi/-MOSFETs

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