NDLI: A surface potential-based compact model of n-MOSFET gate-tunneling current

Content Provider	IEEE Xplore Digital Library
Author	Xin Gu Ten-Lon Chen Gildenblat, G. Workman, G.O. Veeraraghavan, S. Shapira, S. Stiles, K.
Copyright Year	1963
Abstract	Aggressive scaling of the gate-oxide thickness has made gate-tunneling current an essential aspect of MOSFET modeling. This work presents a novel physics-based compact model of gate current in the n-MOSFET. A simplified version of the Esaki-Tsu formula is developed to calculate the tunneling current density, in which the original integral is approximated to retain the essential physics without sacrificing computational efficiency required in a compact model. The proposed model is surface potential-based in both the channel and source/drain overlap regions. The channel component of the gate current is physically partitioned into the source and drain parts using a symmetrically linearized version of the charge-sheet model. The partition is implemented in analytical form and accounts for the drain bias dependence of the channel component. A small number of adjustable parameters is sufficient to reproduce the experimentally observed bias and geometry dependence of the gate current for several advanced processes.
Sponsorship	IEEE Electron Devices Society
Starting Page	127
Ending Page	135
Page Count	9
File Size	916018
File Format	PDF
ISSN	00189383
Volume Number	51
Issue Number	1
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2004-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFETs Tunneling Current density
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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