NDLI: Very high density RF MIM capacitors (17 fF/μm/sup 2/) using high-/spl kappa/ Al/sub 2/O<sub>3</sub> doped Ta/sub 2/O/sub 5/ dielectrics

Content Provider	IEEE Xplore Digital Library
Author	Yang, M.Y. Huang, C.H. Chin, A. Chunxiang Zhu Cho, B.J. Li, M.F. Dim-Lee Kwong
Copyright Year	2001
Abstract	Using high-/spl kappa/ Al/sub 2/O/sub 3/ doped Ta/sub 2/O/sub 5/ dielectric, we have obtained record high MIM capacitance density of 17 fF//spl mu/m/sup 2/ at 100 kHz, small 5% capacitance reduction to RF frequency range, and low leakage current density of 8.9/spl times/10/sup -7/ A/cm/sup 2/. In combination of both high capacitor density and low leakage current density, a very low leakage current of 5.2/spl times/10/sup -12/ A is calculated for a typical large 10 pF capacitor used in RF IC that is even smaller than that of a deep sub-/spl mu/m MOSFET. This very high capacitance density with good MIM capacitor characteristics can significantly reduce the chip size of RF ICs.
Sponsorship	IEEE Microwave Theory and Techniques Society
Starting Page	431
Ending Page	433
Page Count	3
File Size	292227
File Format	PDF
ISSN	15311309
Volume Number	13
Issue Number	10
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2003-10-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Radio frequency MIM capacitors High K dielectric materials High-K gate dielectrics Capacitance Leakage current Transmission line measurements Electrodes Radiofrequency integrated circuits Very large scale integration
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electrical and Electronic Engineering

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