NDLI: An integratable dual metal gate CMOS process using an ultrathin aluminum nitride buffer layer

Content Provider	IEEE Xplore Digital Library
Author	Chang Seo Park Byung Jin Cho Dim-Lee Kwong
Copyright Year	1980
Abstract	We propose and demonstrate a novel approach for dual metal gate CMOS process integration through the use of a very thin aluminum nitride (AlN/sub x/) buffer layer between metal and gate oxide. This buffer layer prevents the gate oxide from being exposed to a metal etching process which potentially causes oxide thinning and damage. Subsequent annealing consumes the very thin AlN/sub x/ layer and converts it into a new metal alloy film by reacting with gate metals, resulting in no increase in EOT due to this buffer layer. The work function of the original gate metal is also modified as a result of its reaction with AlN/sub x/, making this approach extremely attractive for engineering the work function for dual metal gate CMOS applications.
Sponsorship	IEEE Electron Devices Society
Starting Page	298
Ending Page	300
Page Count	3
File Size	226225
File Format	PDF
ISSN	07413106
Volume Number	24
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2003-05-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	CMOS process Aluminum nitride Buffer layers Dielectrics MOSFET circuits Annealing Etching Electrodes Chemicals CMOS technology
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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