NDLI: Study of silicon carbide for X-ray detection and spectroscopy

Content Provider	IEEE Xplore Digital Library
Author	Bertuccio, G. Casiraghi, R.
Copyright Year	1963
Abstract	This work presents an analysis of silicon carbide (SiC) as semiconductor for the realization of detectors for soft X-rays (<20 keV). On the basis of experimental data on prototype SiC junctions, the performance in X-ray spectroscopy using planar diode and drift detectors in SiC have been estimated in a wide range of operating temperature (up to 150/spl deg/C). It has been derived that, due to their extremely low reverse current density (4.7 pA/cm/sup 2/ at 300 K and 17 pA/cm/sup 2/ at 340 K and at electric field of 100 kV/cm), SiC detectors can potentially reach superior performance with respect to all the other semiconductors presently employed at or above room temperature. In particular, a comparative theoretical analysis, based on experimental data on state-of-the-art silicon and SiC junctions, shows that SiC detectors with areas larger than 1 mm/sup 2/ have the potentiality to offer higher energy resolution when operating at temperature above 25/spl deg/C. An energy resolution of about 700 and 1300 eV FWHM have been estimated for 1 mm/sup 2/ and 10 mm/sup 2/ SiC pad detectors operating at 100/spl deg/C with a silicon front-end FET. The contribution of a standard silicon front-end electronics on the system performance has been analyzed. The open issues in SiC technology for X-ray detector development are highlighted.
Sponsorship	IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD
Starting Page	175
Ending Page	185
Page Count	11
File Size	677047
File Format	PDF
ISSN	00189499
Volume Number	50
Issue Number	1
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2003-02-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon carbide X-ray detection Spectroscopy X-ray detectors Energy resolution Prototypes Semiconductor diodes Temperature distribution Current density FETs
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
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3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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