NDLI: Trends in the ultimate breakdown strength of high dielectric-constant materials

Content Provider	IEEE Xplore Digital Library
Author	McPherson, J.W. Jinyoung Kim Shanware, A. Mogul, H. Rodriguez, J.
Copyright Year	1963
Abstract	The ultimate breakdown strength E/sub bd/ of a dielectric material is found to decrease as the dielectric-constant k increases. A thermochemical description of the ultimate breakdown strength of high-k dielectrics suggests that E/sub bd/ should reduce approximately as (k)/sup -1/2/ over a wide range of dielectric materials while the field-acceleration parameter /spl gamma/ should increase in similar but inverse manner. New time-dependent dielectric breakdown (TDDB) data are presented over a wide range of dielectric materials and E/sub bd/ was found to decrease as (k)/sup -0.65/ while /spl gamma/ increases as (k)/sup 0.66/. The good agreement between thermochemical theory and high-k TDDB observations suggests that the very high local electric field (Lorentz-relation/Mossotti-field) in high-k dielectrics tends to distort/weaken the polar molecular bonds making them more susceptible to bond breakage by standard Boltzmann processes and/or by hole-capture and thus lowers the breakdown strength.
Sponsorship	IEEE Electron Devices Society
Starting Page	1771
Ending Page	1778
Page Count	8
File Size	778415
File Format	PDF
ISSN	00189383
Volume Number	50
Issue Number	8
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2003-08-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Dielectric breakdown Permittivity Electric breakdown MIS devices Semiconductor device reliability
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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