NDLI: Modeling alpha-particle-induced accelerated soft error rate in semiconductor memory

Content Provider	IEEE Xplore Digital Library
Author	Myeong Kook Gong Do Woo Kim Chang Yeol Lee Deuk Sung Choi Dae-Gwan Kang
Copyright Year	1963
Abstract	This paper presents an analytic integral model for the accelerated soft error rate (ASER). The model took into account the physical and structural parameters as four alpha incident angles and an angular function. Two angles were related to charge collection and another two angles and an angular function were related to measurement configuration and how much alpha flux arrived. The model was verified by measuring ASER in 8 M static RAM. The model could explain ASER characteristics of saturation, exponential dependence, and vanishing with the power supply voltage. The model also reproduced an extraordinary phenomenon that there is a maximum in ASER with respect to the thickness of the capping layer on the static RAM.
Sponsorship	IEEE Electron Devices Society
Starting Page	1652
Ending Page	1657
Page Count	6
File Size	414474
File Format	PDF
ISSN	00189383
Volume Number	50
Issue Number	7
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2003-07-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Error analysis Alpha-particle radiation effects Integrated circuit modeling SRAM chips
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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