NDLI: Analysis of CMOS Photodiodes. II. Lateral photoresponse

Content Provider	IEEE Xplore Digital Library
Author	Ji Soo Lee Hornsey, R.I. Renshaw, D.
Copyright Year	1963
Abstract	For pt.I see ibid., vol.50, no.5, p.1233-38 (2003). In Part I of this paper, an improved one-dimensional (1-D) analysis and a semiempirical model of quantum efficiency for CMOS photodiode was illustrated. In this part of the paper, the lateral photoresponse in CMOS photodiode arrays is investigated with test linear photodiode arrays and numerical device simulations. It is shown that the surface recombination and mobility degradation along the Si-SiO/sub 2/ interface are important factors in determining the lateral photoresponse of CMOS photodiodes. The limitations of traditional analytical approaches are briefly discussed in this context, and a novel three-dimensional (3-D) analysis of lateral photoresponse is presented. Given the significant dependence of lateral photoresponse on the Si-SiO/sub 2/ interface quality, an empirical characterization method is proposed as a more reliable solution to modeling lateral photoresponse.
Sponsorship	IEEE Electron Devices Society
Starting Page	1239
Ending Page	1245
Page Count	7
File Size	529056
File Format	PDF
ISSN	00189383
Volume Number	50
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2003-05-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Photodiodes Arrays Semiconductor device modeling Charge carrier lifetime Semiconductor-insulator interfaces Charge carrier mobility
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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