NDLI: GaN metal-semiconductor-metal ultraviolet sensors with various contact electrodes

Content Provider	IEEE Xplore Digital Library
Author	Su, Y.K. Chang, S.J. Chen, C.H. Chen, J.F. Chi, G.C. Sheu, J.K. Lai, W.C. Tsai, J.M.
Copyright Year	2001
Abstract	Indium-tin-oxide (ITO), Au, Ni, and Pt layers were deposited onto n-GaN films and/or glass substrates by electron-beam evaporation. With proper annealing, it was found that we could improve the optical properties of the ITO layers and achieve a maximum transmittance of 98% at 360 nm. GaN-based MSM UV sensors with ITO, Au, Ni, and Pt as contact electrodes were also fabricated. It was found that we could achieve a maximum 0.12 A photocurrent and a photocurrent to dark current contrast higher than five orders of magnitude for the 600/spl deg/C-annealed ITO/n-GaN MSM UV sensor at a 5-V bias voltage. We also found that the maximum responsivity at 345 nm was 7.2 A/W and 0.9 A/W when the 600/spl deg/C-annealed ITO/n-GaN MSM UV sensor was biased at 5 V and 0.5 V, respectively. These values were much larger than those observed from other metal/n-GaN MSM UV sensors. However, the existence of photoconductive gain in the 600/spl deg/C-annealed ITO/n-GaN MSM UV sensor also results in a slower operation speed and a smaller 3-dB bandwidth as compared with the metal/n-GaN MSM UV sensors.
Sponsorship	IEEE Sensors Council
Starting Page	366
Ending Page	371
Page Count	6
File Size	397197
File Format	PDF
ISSN	1530437X
Volume Number	2
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-08-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium nitride Electrodes Indium tin oxide Gold Optical films Photoconductivity Glass Annealing Optical sensors Dark current
Content Type	Text
Resource Type	Article
Subject	Instrumentation Electrical and Electronic Engineering

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