NDLI: Lead Salt Photoconductors

Content Provider	IEEE Xplore Digital Library
Author	Moss, T.S.
Copyright Year	1931
Abstract	This review article discusses the fundamental basis of photoconductivity in lead sulphide, telluride, and selenide, and its application in modern highly sensitive infrared detectors. The first part of the paper deals with the manufacture of cells and the processing of photosensitive layers; and with the characteristics of the final detectors, such as response time, sensitivity, and spectral distribution of sensitivity. The factors determining the maximum attainable sensitivity are discussed. The second part covers fundamental semiconducting properties of the three materials, including absorption, activation energies, carrier lifetimes and effective masses; and the theory of photoeffects in layers. Some applications of these detectors are described. An extensive list of references is given.
Starting Page	1869
Ending Page	1881
Page Count	13
File Size	3378346
File Format	PDF
ISSN	00968390
Volume Number	43
Issue Number	12
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1955-12-01
Access Restriction	Subscribed
Rights Holder	The Institute of Radio Engineers, Inc. (IRE)
Subject Keyword	Photoconductivity Lead compounds Infrared detectors Manufacturing processes Pulp manufacturing Semiconductor device manufacture Delay Semiconductivity Semiconductor materials Absorption
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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Lead Salt Photoconductors