An implanted-emitter 4H-SiC bipolar transistor with high current gain

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The effect of emitter implant and anneal on high-voltage 4H-SiC BJTs

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Surface-Passivation Effects on the Performance of 4H-SiC BJTs

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4 kV 4H-SiC epitaxial emitter bipolar junction transistors

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4H-SiC power bipolar transistors with common emitter current gain >50

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Fabrication of 2700-V 12-$hbox{m}Omega cdot hbox{cm}^{2}$ Non Ion-Implanted 4H-SiC BJTs With Common-Emitter Current Gain of 50

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High gain monolithic 4H-SiC Darlington transistors

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4kV 4H-SiC Epitaxial Emitter Bipolar Junction Transistors

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High-performance power BJTs in 4H-SiC

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