NDLI: Advances in the crystal growth of semi-insulating CdZnTe for radiation detector applications

Content Provider	IEEE Xplore Digital Library
Author	Szeles, C. Cameron, S.E. Ndap, J.-O. Chalmers, W.C.
Copyright Year	1963
Abstract	The growth of large-volume semi-insulating CdZnTe single crystals with improved structural perfection has been demonstrated by the electrodynamic gradient (EDG) technique and active control of the Cd partial pressure in the ampoule. The EDG furnace nearly completely eliminates the uncontrolled radiative heat transport commonly encountered in traditional Bridgman systems where the charge and furnace move relative to each other. Since the new furnace utilizes electronically controlled high-precision gradient translation, it achieves superior thermal stability throughout the growth. The control of the Cd partial pressure allowed the solidification and cool-down of the ingots close to the stoichiometric composition. As a result, the formation and incorporation of large-size (/spl ges/1 /spl mu/m diameter) Te inclusions was avoided during crystallization and ingots with high structural perfection were achieved. Adequate electrical compensation has been achieved in most of the crystal growth experiments yielding CdZnTe crystals with bulk electrical resistivity in the 10/sup 9/-10/sup 10/ /spl Omega//spl middot/cm range and electron mobility-lifetime product as high as /spl mu//spl tau//sub e/=1.2/spl times/10/sup -3/ cm/sup 2//V. The materials exhibit good spectral performance in the parallel plate detector configuration.
Sponsorship	IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD
Starting Page	2535
Ending Page	2540
Page Count	6
File Size	676047
File Format	PDF
ISSN	00189499
Volume Number	49
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-10-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Radiation detectors Furnaces Crystallization Pressure control Crystals Electrodynamics Thermal stability Temperature control Tellurium Electric resistance
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering

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Advances in the crystal growth of semiinsulating CdZnTe for radiation detector applications

Advances in the high-pressure crystal growth technology of semi-insulating CdZnTe for radiation detector applications

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Advances in the crystal growth of semi-insulating CdZnTe for radiation detector applications

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