NDLI: Characterization of hard- and soft-switching performance of high-voltage Si and 4H-SiC PiN diodes

Content Provider	IEEE Xplore Digital Library
Author	Shenai, K. Trivedi, M. Neudeck, P.G.
Copyright Year	1963
Abstract	This paper presents a study of the performance of high-voltage Si and 4H-SiC diodes in a DC-DC buck converter. Device operation in both hard- and zero-voltage switching conditions is presented with the help of measurements and two-dimensional (2-D) mixed device-circuit simulations. Experimental results show that SiC PiN diodes have a strong potential for use in high-speed high-voltage power electronics applications operating at high temperature. A combination of low excess carrier concentration and low carrier lifetime results in superior switching performance of the 4H-SiC diode over ultrafast Si diodes. Soft switching is shown to minimize the switching loss and allow operation at higher switching frequencies using Si diodes. The power loss of 4H-SiC diodes is dominated by conduction loss. Consequently, soft-switching techniques result in a marginal reduction in power loss. However, the low overall power loss implies that SiC diodes can be used at very high switching frequencies even in hard-switching configurations.
Sponsorship	IEEE Electron Devices Society
Starting Page	1648
Ending Page	1656
Page Count	9
File Size	331557
File Format	PDF
ISSN	00189383
Volume Number	49
Issue Number	9
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-09-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon Silicon compounds p-i-n diodes Power semiconductor diodes Power semiconductor switches Charge carrier density Losses DC-DC power conversion Semiconductor device modeling
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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